TVS Diodes

SMAJ

Features
• Glass passivated chip
• 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• Meets MSL Level 1

Devices For Bipolar Application
For Bidirectional types, use C or CA as suffix; suffixes without A, the VBR is土10%. (e.g. SMAJ5.0C , SMAJ440CA).

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SMBJ

Features
• Glass passivated chip
• 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• Meets MSL Level 1

Devices For Bipolar Application
• For Bidirectional types, use C or CA as suffix; suffixes without A, the VBR is士10%. (e.g. SMBJ5.0C , SMBJ440CA). Electrical characteristics apply in both directions

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SMA6J

Features
• Glass passivated chip
• 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• Meets MSL Level 1

Devices For Bipolar Application
• For Bidirectional types, use C or CA as suffix; suffixes without A, the VBR is士10%. (e.g. SMA6J5.0C, SMA6J90CA). Electrical characteristics apply in both directions

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SMCJ

Features
• Glass passivated chip
• 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
• Meets MSL Level 1

Devices For Bipolar Application

• For Bidirectional types, use C or CA as suffix suffixes without A, the VBR is士10%. (e.g. SMCJ5.0C , SMCJ440CA). Electrical characteristics apply in both directions

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SMDJ

Features
• Glass passivated chip
• 3000 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
• Meets MSL Level 1

Devices For Bipolar Application
• For Bidirectional types, use C or CA as suffix suffixes without A, the VBR is士10%. (e.g. SMDJ5.0C, SMDJ40CA). Electrical characteristics apply in both directions

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SM5Z

Features
• Optimized glass passivated chip
• T J = 175 °C capability suitable for high reliability and automotive requirement
• 3600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle):0.01 %
• Meet ISO 7637-2 5a/5b and ISO 16750 load dump test (varied by test condition)
• AEC-Q101 qualified
• Low leakage current
• Low forward voltage drop
• Excellent clamping capability
• Very fast response time
• RoHS compliant

Mechanical Data
• Case: D0-218AB
• Molding compound: UL94V-O flammability
• Polarity: Heatsink is anode

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SM6Z

Features
• Optimized glass passivated chip
• T J = 175 °C capability suitable for high reliability and automotive requirement
• 4600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle):0.01 %
• Meet ISO 7637-2 5a/5b and ISO 16750 load dump test (varied by test condition)
• AEC-Q101 qualified
• Low leakage current
• Low forward voltage drop
• Excellent clamping capability
• Very fast response time
• RoHS compliant

Mechanical Data
• Case: D0-218AB
• Molding compound: UL94V-O flammability
• Polarity: Heatsink is anode

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SM8Z

Features
• Optimized glass passivated chip
• T J = 175 °C capability suitable for high reliability and automotive requirement
• 6600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle):0.01 %
• Meet ISO 7637-2 5a/5b and ISO 16750 load dump test (varied by test condition)
• AEC-Q101 qualified
• Low leakage current
• Low forward voltage drop
• Excellent clamping capability
• Very fast response time
• RoHS compliant

Mechanical Data
• Case: D0-218AB
• Molding compound: UL94V-O flammability
• Polarity: Heatsink is anode

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P4SMA

Features
• Glass passivated chip
• 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• Meets MSL Level 1

Devices For Bipolar Application
• For Bidirectional types, use C or CA as suffix suffixes without A, the VBR is士10%. (e.g. P4SMAJ6.8C , P4SMA550CA). Electrical characteristics apply in both directions

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P6SMB

Features
• Glass passivated chip
• 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle) : 0.01%
• Low leakage
• Uni and Bidirectional unit
• Excellent clamping capability
• Very fast response time
• RoHS compliant
• Meets MSL Level 1

Devices For Bipolar Application
• For Bidirectional types, use C or CA as suffix ; suffixes without A, the VBR is士10%. (e.g. P6SMB6.8C , P6SMB550CA). Electrical characteristics apply in both directions

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